High Collector-Emitter breakdown voltage
Low Collector Saturation Voltage
Complement to Type KSE340
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High voltage general purpose applications
Suit
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isc Silicon PNP Power Transistor
KSE350
DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE340 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage general purpose applications ·Suitable for transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-0.5
A
20 W
1.3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
KSE350 Datasheet
