High DC current gain
Built-in a damper diode at E-C
Electrically similar to popular TIP112
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose amplifier and low speed
switchi
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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation Ta=25℃
PC
Collector Power Dissipation TC=25℃
TJ
Junction Temperature
4
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
KSH112
isc website：www.
KSH112 Datasheet
