KSH117 - PNP Transistor

Inchange Semiconductor

General Description

High DC current gain Built-in a damper diode at E-C Electrically similar to popular TIP117 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switchi

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Datasheet Details

Part number	KSH117
Manufacturer	Inchange Semiconductor
File Size	286.16 KB
Description	PNP Transistor
Datasheet	KSH117 Datasheet

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isc Silicon PNP Power Transistor INCHANGE Semiconductor KSH117 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP117 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -4 A 1.