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KSH200 - NPN Transistor

General Description

High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“－I”suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliab

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ 5 A 1.4 W 12.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH200 isc website：www.iscsemi.