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KSH31C - NPN Transistor

General Description

Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“-I”suffix) Electrically similar to popular TIP31C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier l

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isc Silicon NPN Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular TIP31C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier low speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ 3 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH31C isc website:www.iscsemi.