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KSH32C - PNP Transistor

General Description

Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“－I”suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier

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isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier ·Low speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -3 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH32C isc website：www.iscsemi.