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isc Silicon NPN Power Transistor
DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
0.5
A
1.56
W
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
KSH340
isc website:www.iscsemi.