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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KTA1381
DESCRIPTION ·High voltage ·Low reverse transfer capacitance ·Excellent gain linearity for low THD ·High frequency ·Complement to KTC3503 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio voltage amplifier and current source ·CRT display ,video output ·General purpose amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-100
mA
1.