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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1060C
FEATURES ·Low forward voltage drop ·150℃ operating junction temperature ·High surge current capacity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power Supply Output Rectification ·Power Management
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
60
V
IF(AV)
Average Rectified Forward Current
10
A
Non-repetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
125
A
wave, single phase, 60Hz)
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.