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MBR10L100CT - Schottky Barrier Rectifier

Datasheet Summary

Features

  • Metal silicon junction, majority carrier conduction.
  • Low leakage current, low power loss, high efficiency.
  • Dual rectifier construction, positive center tap.
  • Guardring for overvoltage protection.
  • High surge current capability.
  • Guard-ring for overvoltage protection.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number MBR10L100CT
Manufacturer INCHANGE
File Size 183.60 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet MBR10L100CT Datasheet
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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L100CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Guard-ring for overvoltage protection ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNIT 100 70 V 100 10 A IFRM Peak Repetitive Forward Current 1
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