• Part: MBR10L100CT
  • Description: Dual Common Cathode Schottky Rectifier
  • Manufacturer: Taiwan Semiconductor
  • Size: 194.96 KB
Download MBR10L100CT Datasheet PDF
Taiwan Semiconductor
MBR10L100CT
MBR10L100CT is Dual Common Cathode Schottky Rectifier manufactured by Taiwan Semiconductor.
FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding pound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage Maximum DC blocking voltage VRMS VDC 70 100 Maximum average forward rectified current IF(AV) Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25℃ IF= 5A, TJ=125℃ IF=10A, TJ=25℃ IF=10A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IRRM IR d V/dt RθJC TJ TSTG 1 TYP MAX 0.73 0.76 0.59 0.65 0.82 0.85 0.66 0.71 TYP MAX 0.30...