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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10L100CT
FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Guard-ring for overvoltage protection ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
VALUE UNIT
100
70
V
100
10
A
IFRM
Peak Repetitive Forward Current
1
MBR10L100CT Datasheet
