Download MCR106-6 Datasheet PDF
Inchange Semiconductor
MCR106-6
FEATURES - Low Thermal Resistance - High Heat Dissipation and Durability - Designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems and etc. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current TC=93℃ IT(RMS) on-state RMScurrent TC=93℃ PGM Peak gate power TC=93℃ PG(AV) Average gate power TC=93℃ Tj Operating junction temperature Tstg Storage temperature UNIT ℃ -40~+ 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRRM=400V VRRM=400V, Tj= 110℃ IDRM Repetitive peak off-state current VDRM=400V VDRM=400V, Tj= 110℃ Gate trigger current VD= 7V;...