Datasheet Details
| Part number | MCR8SDG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.93 KB |
| Description | Thyristors |
| Download | MCR8SDG Download (PDF) |
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| Part number | MCR8SDG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.93 KB |
| Description | Thyristors |
| Download | MCR8SDG Download (PDF) |
|
|
|
·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM PG(AV) Tj Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current @Tc=80℃ Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tj=110℃ ) Average gate power dissipation Operating junction temperature Tp=8.3ms 60Hz 400 V 400 V 8 A 80 A 0.5 W -40~110 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM VTM On-state voltage ITM= 16A Tj=25℃ Tj=110℃ 0.01 0.5 mA 1.8 V IGT Gate-trigger current VD = 12 V;
RL=100Ω 0.2 mA VGT Gate-trigger voltage VD = 12 V;
RL=100Ω 1.0 V Rth(j-c) Thermal resistance Junction to case 2.2 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
isc Thyristors MCR8SDG.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MCR8SDG | Sensitive Gate Silicon Controlled Rectifier | Littelfuse |
 |
MCR8SD | Sensitive Gate Silicon Controlled Rectifiers | ON Semiconductor |
 |
MCR8SD | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
 |
MCR8S | Silicon Controlled Rectifiers | Motorola |
|
MCR8SM | Sensitive Gate Silicon Controlled Rectifiers | ON Semiconductor |
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