MCR8SDG
MCR8SDG is Thyristors manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-220 packaging
- High surge capability
- Glass passivated junctions and center gate fire for greater parameter uniformity and stability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VDRM VRRM IT(RMS)
ITSM
PG(AV) Tj
Repetitive peak off-state voltage
Repetitive peak reverse voltage RMS on-state current @Tc=80℃ Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tj=110℃ ) Average gate power dissipation
Operating junction temperature
Tp=8.3ms
60Hz
-40~110 ℃
Tstg Storage temperature
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM
VTM On-state voltage
ITM= 16A
Tj=25℃ Tj=110℃
0.01 0.5 m A
1.8 V
Gate-trigger current
VD = 12 V; RL=100Ω
0.2 m A
VGT Gate-trigger...
