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MDO1201-22N1
Rectifier Diode Module
FEATURES ·Isolated Base Plate ·Low Forward Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·These devices are ideally suited for power converters,
motors drives and other applications where switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VR
Repetitive Peak Reverse Voltage
IF(AV)
Average Forward Current
IFSM
Surge Forward Current
VISO
Maximum Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature Range
CONDITIONS
TC=100℃ Tp=10ms，TJ=160℃
VALUE UNIT
2200
V
1280
A
36
kA
3000
V
-40~160
℃
-55~160
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Per diode
MAX 0.
MDO1201-22N1 Datasheet
