Datasheet Details
| Part number | MFT60N12T22FS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.49 KB |
| Description | N-Channel MOSFET |
| Datasheet | MFT60N12T22FS-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | MFT60N12T22FS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.49 KB |
| Description | N-Channel MOSFET |
| Datasheet | MFT60N12T22FS-INCHANGE.pdf |
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·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for tele, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Pulsed drain current 24 A Ptot Total Dissipation@TC=25℃ 45 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Thermal Resistance, Junction to Case MAX UNIT 2.78 ℃/W MFT60N12T22FS isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor MFT60N12T22FS ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(TH) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Meritek | MFT60N12T22FS | MOSFET | Meritek |
| Part Number | Description |
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