MJ1000 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-.
| Part number | MJ1000 |
|---|---|
| Datasheet | MJ1000-INCHANGE.pdf |
| File Size | 202.88 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ1000 | Medium-Power Complementary Silicon Transistors | Motorola Inc |
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MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR | SavantIC |
| MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons | Comset Semiconductors |