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MJ10002 - NPN Transistor

General Description

Low Collector-Emitter Sustaining Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is cr

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 350 VCBO Collector- Base Voltage 450 VEBO Emitter-Base Voltage 8 IC Collector Current-Continunous 10 ICM Collector Current-Peak 20 IB Base Current-Continunous 2.