MJ10016 Datasheet | Inchange Semiconductor

DESCRIPTION - With TO-3 packaging - Very high DC current gain - Monolithic darlington transistor with integrated antiparallel collector-emitter diode - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Electronic ignition - Alternator regulator - Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.7 ℃/W isc website： .iscsemi. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100m A, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 20A ,IB= 1.0A VCE(sat)2 Collector-Emitter Saturation Voltage IC= 50A ,IB= 10A VBE(sat)1 Base-Emitter Saturation Voltage IC= 20A ,IB= 1.0m...