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MJ10023 - NPN Transistor

Description

With TO-3 packaging Very high DC current gain Fast turn-off times Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignition

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10023 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Fast turn-off times ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Solenoid and relay drivers ·AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 600 V 400 V 8 V 40 A 80 A IB Base Current- Continuous PC Collector Power Dissipation Tj Max.
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