Datasheet Details
| Part number | MJ10023 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 174.19 KB |
| Description | NPN Transistor |
| Datasheet |
 MJ10023 Datasheet
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| Part number | MJ10023 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.19 KB |
| Description | NPN Transistor |
| Datasheet |
MJ10023 Datasheet
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·With TO-3 packaging ·Very high DC current gain ·Fast turn-off times ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Solenoid and relay drivers ·AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 600 V 400 V 8 V 40 A 80 A IB Base Current- Continuous PC Collector Power Dissipation Tj Max.Junction Temperature 20 A 250 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.7 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10023 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 20A ,IB= 1.0A VCE(sat)2 Collector-Emitter Saturation Voltage IC= 40A ,IB= 5.0A VBE(sat)1 Base-Emitter Saturation Voltage VBE(sat)2 Base-Emitter Saturation Voltage ICER Collector Cutoff Current IC= 20A ,IB= 400mA IC= 20A ,IB= 400mA;Tc=100℃ VCB=600V, IE= 0;RBE=50mΩ ICEV Collector Cutoff Current VCE= 400V, IB= 0;VBE=1.5V IEBO Emitter Cutoff Current VEB= 2V;
IC= 0 hFE DC Current Gain IC= 10A ;
VCE=5V MIN MAX UNIT 400 V 2.2 V 5.0 V 2.5 V 2.5 V 5.0 mA 0.25 mA 175 mA 50 600 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ10023 | 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS | Motorola Inc |
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MJ10023 | NPN SILICON POWER DARLINGTON TRANSISTOR | Central Semiconductor |
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MJ10023 | NPN Transistor | DIGITRON |
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MJ10023 | Silicon NPN Transistor | NTE |
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