MJ11011 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -20A Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A Complement to NPN Type MJ11012 Minimum Lot-to-Lot variations for robust device performance and rel

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Datasheet Details

Part number	MJ11011
Manufacturer	Inchange Semiconductor
File Size	203.85 KB
Description	PNP Transistor
Datasheet	MJ11011 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
MJ11012	NPN Transistor
MJ11014	NPN Transistor
MJ11015	PNP Transistor
MJ11017	PNP Transistor
MJ11018	NPN Transistor

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isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to NPN Type MJ11012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.