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MJ11019 - PNP Transistor

General Description

High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to the NPN MJ11020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifiers ,low frequency swit

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·Complement to the NPN MJ11020 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -200 VCEO Collector-Emitter Voltage -200 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 ICM Collector Current-Peak -30 IB Base Current- Continuous -0.