MJ11031 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -90V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to the NPN MJ11030 Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11031 APPLICATIONS Desig

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MJ11031 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MJ11031
Manufacturer	Inchange Semiconductor
File Size	203.97 KB
Description	PNP Transistor
Datasheet	MJ11031 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
MJ11030	NPN Transistor
MJ11032	NPN Transistor
MJ11033	PNP Transistor
MJ11011	PNP Transistor
MJ11012	NPN Transistor

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11030 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11031 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.