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MJ11032 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A Complement to the PNP MJ11033 Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11032 APPLICATIONS Designe

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to the PNP MJ11033 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11032 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.