Datasheet Details
| Part number | MJ12005 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.59 KB |
| Description | NPN Transistor |
| Download | MJ12005 Download (PDF) |
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| Part number | MJ12005 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.59 KB |
| Description | NPN Transistor |
| Download | MJ12005 Download (PDF) |
|
|
|
· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 4 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 100 W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJ12005 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJ12005 | NPN Silicon Transistor | Central Semiconductor |
 |
MJ12005 | 8 Amp NPN Silicon Power Transistor | Motorols |
|
MJ12005D | 8 Amp NPN Silicon Power Transistor | Motorols |
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