With TO-3 packaging
Very high DC current gain
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Electronic ignition
Alternator regulator
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJ14003
DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB PD Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.