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MJ15011 - NPN Transistor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE= 20(Min.)@IC = 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 4A Complement to the PNP MJ15012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

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isc Silicon NPN Power Transistor MJ15011 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to the PNP MJ15012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.