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MJ15012 - PNP Transistor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE= 20(Min.)@IC = -2A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A Complement to the NPN MJ15011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor MJ15012 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A ·Complement to the NPN MJ15011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.