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MJ15022 - NPN Transistor

General Description

Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLU

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isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION ·Complement to Type PNP MJ15023/15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT MJ15022 350 VCBO Collector-Base Voltage V MJ15024 400 MJ15022 200 VCEO Collector-Emitter Voltage V MJ15024 250 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak (1) IB Base Current-Continuous 16 A 30 A 5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ TH