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MJ15023 - PNP Transistor

General Description

Complement to Type NPN MJ15022 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15023 APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABS

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isc Silicon PNP Power Transistors DESCRIPTION ·Complement to Type NPN MJ15022 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15023 APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -200 V VEBO IC ICM (1) IB PD Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -5 V -16 A -30 A -5 A 250 W -65~200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistan