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MJ15025 - PNP Transistor

General Description

Complement to Type NPN MJ15024 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15025 APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABS

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isc Silicon PNP Power Transistors DESCRIPTION ·Complement to Type NPN MJ15024 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15025 APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal