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MJ15026 - NPN Transistor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE= 25(Min.)@IC = 5A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A Complement to the PNP MJ15027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Complement to the PNP MJ15027 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications.