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MJ15027 - PNP Transistor

General Description

High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(Ta=

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isc Silicon PNP Power Transistor DESCRIPTION ·High current capability ·High power dissipation ·Complement to the NPN MJ15026 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier ·DC to DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.608 ℃/W MJ15027 isc website：www.iscsemi.