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MJ16010 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed

APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications such as: switching regulators,inverters,solenoids,relay drivers,motor controls and deflection circuits and etc.