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MJ16014 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ16014 APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall tim

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ16014 APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.