Excellent Safe Operating Area
DC Current Gain-
: hFE=20-70@IC= -4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
Complement to Type 2N3055A
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isc Silicon PNP Power Transistors
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
MJ2955A Datasheet
