Built-in Base-Emitter Shunt Resistors
High DC current gain
hFE = 1000 (Min) @ IC = 5A
Collector-Emitter Breakdown Voltage
V(BR)CEO= 60V(Min)
Complement to PNP type MJ2500
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
De
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isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain
hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage
V(BR)CEO= 60V(Min) ·Complement to PNP type MJ2500 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
IB
Base Current
0.
MJ3000 Datasheet
