High DC Current Gain
Low Collector-Emitter Saturation Voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated amplifier series pass
and switching regulator applications.