Datasheet Details
| Part number | MJ411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.83 KB |
| Description | NPN Transistor |
| Datasheet | MJ411-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.83 KB |
| Description | NPN Transistor |
| Datasheet | MJ411-INCHANGE.pdf |
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.75 ℃/W MJ411 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ411 | Bipolar NPN Device | Seme LAB |
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MJ411 | NPN POWER TRANSISTOR | Digitron |
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|---|---|
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