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MJ423 - NPN Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) DC Current Gain- : hFE= 30-90@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and swit

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isc Silicon NPN Power Transistor MJ423 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) ·DC Current Gain- : hFE= 30-90@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.