High DC Current Gain-
: hFE= 25-100@IC= -7.5A
Excellent Safe Operating Area
Complement to the NPN MJ802
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as an output device in complementary
audio amplifiers to
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isc Silicon PNP Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 25-100@IC= -7.5A ·Excellent Safe Operating Area ·Complement to the NPN MJ802 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-90
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-30
A
IB
Base Current-Continuous
-7.
MJ4502 Datasheet
