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MJ901 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -3A Low Collector Saturation Voltage- : VCE (sat)= -2.0V(Max.)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

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MJ900 PNP Transistor

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isc Silicon PNP Darlington Power Transistor MJ901 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE (sat)= -2.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.