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MJB3055 NPN Transistor

MJB3055 Description

isc Silicon NPN Power Transistor MJB3055 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). High DC Current Gain- : hFE= 20-100@IC= 4A. Minimum Lot-to-Lot variations for.

MJB3055 Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB

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Datasheet Details

Part number
MJB3055
Manufacturer
INCHANGE
File Size
210.07 KB
Datasheet
MJB3055-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJB3055-like datasheet