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MJD200 - NPN Transistor

General Description

DC Current Gain- : hFE = 70(Min) @ IC= 0.5A Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A Complement to the PNP MJD210 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifi

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 1.4 W 12.