MJD200 Overview
hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·plement to the PNP MJD210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD200 TC =25℃ unless otherwise...
