MJE1100 Overview
·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and output stages in plementary audio amplifier and general-purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJE1100 TC=25℃ unless...
