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MJE15029 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= -0.5A DC current gain - : hFE = 40 (Min) @IC= -3.0 A : hFE = 20 (Min) @IC= -4.0 A Complement to Type MJE15028 Minimum Lot-to-Lot variations for robust devi

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= -0.5A ·DC current gain - : hFE = 40 (Min) @IC= -3.0 A : hFE = 20 (Min) @IC= -4.0 A ·Complement to Type MJE15028 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.