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MJE15030 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.5A DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A Complement to Type MJE15031 Minimum Lot-to-Lot variations for robust device

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.5A ·DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJE15031 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.