Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V(Min)
High Current Gain-Bandwidth Product-
: fT= 30MHz(Min)@ IC= 0.5A
DC current gain -
: hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A
Complement to Type MJE15030
Minimum Lot-to-Lot variations for robust device
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isc Silicon PNP Power Transistor
MJE15031
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V(Min) ·High Current Gain-Bandwidth Product-
: fT= 30MHz(Min)@ IC= 0.5A ·DC current gain -
: hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A
·Complement to Type MJE15030 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as high–frequency drivers in audio
amplifiers.