MJE15034
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO=350V
- Good Linearity of h FE
- plement to Type MJE15035
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-Peack
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
