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MJE15032 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE15032 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A ·Complement to Type MJE15033 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.